ISSN 2394-5125
 

Research Article 


MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES

Tarun Singhal1, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal.

Abstract
Numerical simulation plays an important role in device understanding. Single-electron devices (SEDs) simulations have done by many groups but the requirement of simulation with complete explanation still exists in particular for beginners. In this paper, a single electron transistor (SET) is simulated. The process of simulation is based on the master equation. The master equation approach takes the transition and tunneling of an electron in a probabilistic manner. The simulation result shows the staircase pattern for current-voltage characteristics, phenomena of Coulomb blockade is also observed. The work is extended by observing the effect of temperature, gate voltage and background charge on characteristics. It is observed that the drain current increases with an increase in operating temperature, but it decreases with an increase in background charge. The Coulomb blockade effect can be reduced at a higher value of gate voltage. This paper shows another approach in device simulation and modeling and can play an important role in the progress of novel small size devices.

Key words: SET, tunneling, Coulomb blockade


 
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How to Cite this Article
Pubmed Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. JCR. 2020; 7(19): 1608-1616. doi:10.31838/jcr.07.19.197


Web Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. http://www.jcreview.com/?mno=108103 [Access: July 22, 2020]. doi:10.31838/jcr.07.19.197


AMA (American Medical Association) Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. JCR. 2020; 7(19): 1608-1616. doi:10.31838/jcr.07.19.197



Vancouver/ICMJE Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. JCR. (2020), [cited July 22, 2020]; 7(19): 1608-1616. doi:10.31838/jcr.07.19.197



Harvard Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal (2020) MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. JCR, 7 (19), 1608-1616. doi:10.31838/jcr.07.19.197



Turabian Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. 2020. MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. Journal of Critical Reviews, 7 (19), 1608-1616. doi:10.31838/jcr.07.19.197



Chicago Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. "MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES." Journal of Critical Reviews 7 (2020), 1608-1616. doi:10.31838/jcr.07.19.197



MLA (The Modern Language Association) Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal. "MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES." Journal of Critical Reviews 7.19 (2020), 1608-1616. Print. doi:10.31838/jcr.07.19.197



APA (American Psychological Association) Style

Tarun Singhal, Aanchal Gupta, Prateek Kumar Garg, Ishta Rani, Abhishek Sharma, Kuldeep Sharma, Ankur Singhal (2020) MASTER EQUATION BASED NUMERICAL ANALYSIS OF SINGLE ELECTRON DEVICES. Journal of Critical Reviews, 7 (19), 1608-1616. doi:10.31838/jcr.07.19.197





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