ISSN 2394-5125
 

Research Article 


ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME

Swagata Bhattacherjee, Sunipa Roy.

Abstract
We investigate the impact of device scaling on the performance of InAsxSb1-x - channel n-MOSFETs against thermal noise for different channel lengths, channel thicknesses and insulating layer thicknesses for various frequency and gate voltages. The simulated transfer characteristic curve is compared with reported experimental characteristic to standardize the present model. The attained simulation results of drain current ID and transconductancegMare used to obtain power spectral density of drain current SID/ID2, minimum noise figure NFmin and noise resistance Rn. Our investigation exposes that thermal noise is a function of device dimension and can be suppressed by proper downscaling of channel length, channel thickness and insulator thickness for InAsxSb1-x n-channel MOSFETs. We obtained the reduction in noise resistance ~750 nm, minimum noise figure ~ 1.3 dB and power spectral density ~2.210-24 Hz-1, when the channel length is reduced from 100 to 40 nm for 1 V gate voltage. Betterment is also observed for the reduction of channel thickness. We obtained the reduced results for noise resistance and power spectral density ~190 ohm and 1.2 10-24 Hz-1respectively, when the channel thickness is varied from 10nm to 6 nm for the same gate voltage.

Key words: UTB MOSFETS; thermal noise; noise resistance; power spectral density.


 
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Pubmed Style

Swagata Bhattacherjee, Sunipa Roy. ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. JCR. 2020; 7(19): 4669-4677. doi:10.31838/jcr.07.19.547


Web Style

Swagata Bhattacherjee, Sunipa Roy. ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. http://www.jcreview.com/?mno=127722 [Access: September 15, 2020]. doi:10.31838/jcr.07.19.547


AMA (American Medical Association) Style

Swagata Bhattacherjee, Sunipa Roy. ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. JCR. 2020; 7(19): 4669-4677. doi:10.31838/jcr.07.19.547



Vancouver/ICMJE Style

Swagata Bhattacherjee, Sunipa Roy. ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. JCR. (2020), [cited September 15, 2020]; 7(19): 4669-4677. doi:10.31838/jcr.07.19.547



Harvard Style

Swagata Bhattacherjee, Sunipa Roy (2020) ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. JCR, 7 (19), 4669-4677. doi:10.31838/jcr.07.19.547



Turabian Style

Swagata Bhattacherjee, Sunipa Roy. 2020. ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. Journal of Critical Reviews, 7 (19), 4669-4677. doi:10.31838/jcr.07.19.547



Chicago Style

Swagata Bhattacherjee, Sunipa Roy. "ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME." Journal of Critical Reviews 7 (2020), 4669-4677. doi:10.31838/jcr.07.19.547



MLA (The Modern Language Association) Style

Swagata Bhattacherjee, Sunipa Roy. "ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME." Journal of Critical Reviews 7.19 (2020), 4669-4677. Print. doi:10.31838/jcr.07.19.547



APA (American Psychological Association) Style

Swagata Bhattacherjee, Sunipa Roy (2020) ANALYSIS OF THERMAL NOISE WITH DEVICE SCALING FOR INASXSB1-X UTB MOSFETS IN SUB 100 NM REGIME. Journal of Critical Reviews, 7 (19), 4669-4677. doi:10.31838/jcr.07.19.547